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ECE 6501 / MSE 6592

Mid-term Assignment

Due: October 31, 2022

1. Consider a MOS (Metal Oxide Semiconductor) interface with the following parameters:

-Oxide dielectric thickness = 3.5nm; relative dielectric constant (ϵ_r) = 20

-Semiconductor doping (p type) = 10¹⁷/cm³

A. Plot the low frequency (1Hz) normalized* capacitance vs. voltage characteristics for the above MOS structure (ideal case)

B. Plot the low frequency (1Hz) normalized* capacitance vs. voltage characteristics for the above MOS structure assuming an interface state density (D_it) = 10¹³/cm² at the dielectric/semiconductor interface (spread uniformly through the Silicon band gap)

C. For the MOS interface (with D_it = 10¹³/cm²), plot the normalized* capacitance vs. voltage characteristics for 3 different doping values: 10¹⁶/cm³, 10¹⁷/cm³, and 10¹⁸/cm³.

D. For the MOS interface (with D_it = 10¹³/cm²), plot the normalized* capacitance vs. voltage characteristics for 3 different oxide thickness: 3.5nm, 5nm, 6nm (ϵr = 20 for all three cases)

*Normalized to area (use units of µF/cm²)

2. Analyze any constituent component of the Field-Effect Transistor (FET). Example of such components are MOS (Metal Oxide Semiconductor) stack, Source/Drain contacts, source/channel & drain/channel junctions, inversion channel (your choice does not have to be from the examples listed here) (2-3 pages).

The analysis should cover (but need be not limited to) the following points: (A) What are the basic electronic properties and operating principle of the component; (B) How are these properties used in a FET device; (C) What are the critical challenges in the design of the component; (D) Does the design consideration change in short channel devices/How does scaling affect the design /performance of the component.

Include quantitative analysis as required