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ECEN7003/IMEL7000 (001)

Microelectronic Circuit Design

Project-1

MOSFET Characteristic Analysis and Single-stage Amplifier Design

Part-I MOSFET Characteristic Analysis and Simulation

Part-I Objectives:

1. Basic I-V characteristic:

(1) Based on the simulated results, analyze the ID -VDS, ID -VGS relations of 1.2-V NMOS;

(2) figure out the operation regions;

(3) estimate the corresponding gm & rout from their definitions.

(Hint: by doing parametric analysis in Cadence)

2. Body effect and short-channel effect:

Simulate, observe, and try to discuss the effect from VSB and channel length L on the Vth of 1.2-V NMOS.

3. Simulation vs hand-calculation of ID :

Obtain the parameters of μnCox and λ (channel length modulation coefficient) for 1.2-V NMOS from simulation. Use them in the hand calculation of ID then compare the calculated result with the simulated ones.

(Hint: the ‘betaeff’ parameter in DC analysis simulation result represent the ‘μnCoxW/L’)

Part-II Single-stage Amplifier Design and Simulation

Part-II Objectives:

1. Schematic design and simulation:

Use 1.2-V CMOS devices to design and simulate CS, CG, and SF amplifiers. (Body effect discussion is suggested)

2. Layout implementation (*optional bonus):

For the designed CS amplifier, perform DRC/LVS check and try to run post-layout simulations with RC extraction

Design Specifications for 1.2-V Amplifiers:

• The overall achieved performance would be the higher, the better, i.e., higher gain, larger GBW, lower power, and smaller area.

Important:

➢ Individual project report submission due: 13 Oct. 2025, 00:00

➢ Project-1 is an individual project. It is required to complete it and submit the report individually.

➢ Report guidelines can be found in UMMoodle.